Junctionless Fet

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  1. Junctionless Fet
  2. Junctionless Tunnel Fet
  3. Double Gate Junctionless Fet
FET

Around junctionless silicon nanowire (GAA JL SiNW) FET has become a promising transistor device for its relatively simple process flow and high performance 3. This kind of SiNW FET can simultaneously satisfy the two requirements for high linearityduetoitsnanoscalefeaturesizeandimmunitytoshort-channeleffects3.Unfortunately,asfarasweknow,thereisno.

полевой транзистор

Genuine Toshiba 2SK30A JFET. Low Noise Silicon N-channel Junction Field Effect Transistor. Sweden, Singapore, South Korea, Singapore, Vietnam, Great Britain & Canada. Junction less transistor is a uniformly doped nanowire without junctions with a wrap-around gate. All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material.

English-Russian dictionary of mechanical engineering and automation. - RUSSO. B.S. Voskoboinikov, V.L. Mitrovich. 2003.

Смотреть что такое 'FET' в других словарях:

  • Fet — Blason de Fet Localisation de Fet dans le Akershus … Wikipédia en Français

  • Fet — Fet, v. t. [OE. fetten, feten, AS. fetian; akin to AS. f[ae]t a journey, and to E. foot; cf. G. fassen to seize. [root] 77. See {Foot}, and cf. {Fetch}.] To fetch. [Obs.] [1913 Webster] And from the other fifty soon the prisoner fet. Spenser.… … The Collaborative International Dictionary of English

  • Usb dvd tool for mac. FET — can mean: *Falkirk Environment Trust *Family Effectiveness Training *Fast Expression Templates *Federation of Environmental Technologists *FET, a Mazda piston engine *Field effect transistor in electronics *Flaming Eternity *Free Evolutionary… … Wikipedia

  • FET — Saltar a navegación, búsqueda FET puede referirse a: Falange Española Tradicionalista y de las JONS, el nombre del partido único de la España franquista; Field effect transistor, transistor de efecto campo en inglés. Obtenido de FET Categoría:… … Wikipedia Español

  • fet´id|ly — fet|id «FEHT ihd, FEE tihd», adjective. smelling very bad; stinking. SYNONYM(S): malodorous, noisome. Also, foetid. ╂[< Latin foetidus < foetēre to smell] –fet´id|ly, adverb. –fet´id|ness, noun … Useful english dictionary

  • fet|id — «FEHT ihd, FEE tihd», adjective. smelling very bad; stinking. SYNONYM(S): malodorous, noisome. Also, foetid. ╂[< Latin foetidus < foetēre to smell] –fet´id|ly, adverb. –fet´id|ness, noun … Useful english dictionary

  • Fet — Fet, p. p. of {Fette}. Fetched. [Obs.] Chaucer. [1913 Webster] … The Collaborative International Dictionary of English

  • Fet — Fet, n. [Cf. feat, F. fait, and It. fett? slice, G. fetzen rag, Icel. fat garment.] A piece. [Obs.] Dryton. [1913 Webster] … The Collaborative International Dictionary of English

  • FET — steht für: Fachgesellschaft für Ernährungstherapie und Prävention Feldeffekttransistor in der Elektronik aus radioaktivem Fluor 18 hergestelltes Fluorethyltyrosin, ein Tracer für die Positronen Emissions Tomographie (PET) in der Nuklearmedizin… … Deutsch Wikipedia

  • fet — fȅt [b] (II)[/b] m DEFINICIJA tisk. podebljani, masni tisak; bold ETIMOLOGIJA vidi fet [b] (I)[/b] … Hrvatski jezični portal

  • fet|tu|ci|ne — fet|tuc|cine or fet|tu|ci|ne «FEHT uh CHEE nee», noun. 1. Italian noodles, made in strips or ribbons; flat, thin noodles. 2. a dish of such noodles, prepared with butter, cheese, and sometimes cream. ╂[< Italian fettuccine, plural of… … Useful english dictionary

Книги

  • Tunnel Field-effect Transistors (TFET). Modelling and Simulation, Rajat Vishnoi. Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the… ПодробнееКупить за 7964.88 рубэлектронная книга
  • The collection of romances for medium and high voices on lyrics by A A Fet Accompanied by piano Сборник романсов для средних и высоких голосов на стихи А А Фета В сопровождении фортепиано Ноты, Быстров А. Романсы современного композитора А. В. Быстрова предназначены для средних и высоких голосов. Роль фортепиано, за исключением некоторых мест, не сводится к аккомпанированию. В фортепианной… ПодробнееКупить за 398 руб
  • Lettres de mon moulin, Alphonse Daudet. Le Sous-Pr&# 233;fet aux champs, Le Cur&# 233; de Cucugnan, La Ch&# 232;vre de M. Seguin: comme La Fontaine, Grimm ou Perrault, Daudet poss&# 233;dait le don supr&# 234;me du conteur qui est… ПодробнееКупить за 382 руб
Junctionless FetДругие книги по запросу «FET» >>

Performance optimisation of junctionless FET in nano regime using segmented channel - A 3D numerical simulation study

Abstract

The performance of the planar junctionless devices is improved using corrugated substrate also known as SegFET device. Bulk and SOI based planar junctionless devices are investigated for their performance enhancement using 3D numerical simulations. Four devices, (i) BPJLT - junctionless device on bulk planar substrate (ii) BPJL SegFET - junctionless device on bulk corrugated substrate (iii) SOIJLT - junctionless device on SOI planar substrate (iv) SOIJL SegFET - junctionless device on SOI corrugated substrate, are taken for study. BPJL SegFET and SOIJL SegFET devices are compared against BPJLT and SOIJLT devices to find out the benefit of the corrugated substrate in junctionless devices. The parameters ION, IOFF, ION/IOFF ratio and unity gain frequency (fT) are used for comparison. Replacing the planar substrate with corrugated substrate improves the ION/IOFF ratio but degrades fT. The impact of corrugated substrate on bulk device is more compared to SOI device. The impact of VSTI region (WVSTI) and stripe region widths (WSPACE), and permittivity of VSTI region (KVSTI) are also analyzed. While better ION/IOFF performance can be achieved by using higher permittivity in VSTI region and by increasing the VSTI width, higher fT is obtained by using higher stripe width. A full factorial DOE simulation has also been performed in order to rank the above three parameters with respect to ION, IOFF and ION/IOFF at the end. An overall ranking has also been provided which predicts WVSTI to be the most sensitive parameter irrespective of ION, IOFF or ION/IOFF.


Publication:
Pub Date:
November 2017
DOI:
10.1016/j.spmi.2017.08.031

Junctionless Fet

Bibcode:
2017SuMi.111.1233S

Junctionless Tunnel Fet

Keywords:

Double Gate Junctionless Fet

  • VSTI;
  • BPJL SegFET;
  • SOIJL SegFET;
  • TCAD and f<SUB>T</SUB>