EPC2215 32 A 200 V eGaN ® FET. The EPC2215 is a 200 V, 8 mΩ eGaN FET with a pulsed current rating of 32 A in a tiny 7.4 mm² footprint. Ideal for class‑D audio, synchronous rectification, DC‑DC converters, solar MPPTs, and motor drives. EPC2215, EPC, GAN TRANS 200V 8MOHM BUMPED DIE Buy Audio Products on SemiKart at the lowest price with no minimum order value. EPC2215 200V8mΩ, 42A 4.6 x 1.6 LGA March EPC2204 100V5mΩ 2.5 x 1.5 LGA March EPC2207 200V22mΩ, 13A 2.8 x 0.95 LGA April. Www.epc-co.com 34.

EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2215 and EPC2207 200 V eGaN FETs. The applications for these leading-edge devices include class-D audio, synchronous rectification, solar MPPTs (maximum power point tracker), DC-DC converters (hard-switched and resonant), and multilevel high voltage converters.

The EPC2215 (8 mΩ, 162 A_pulsed) and the EPC2207 (22 mΩ, 54 A_pulsed) are about half the size of the prior generation 200 V eGaN devices and double the performance. The performance advantage over a benchmark silicon device is even higher. The EPC2215 has 33% lower on-resistance, yet is 15 times smaller in size. Gate charge (Q_G) is ten times smaller than the silicon MOSFET benchmark with the new technology, and like all eGaN FETs, there is no reverse recovery charge (Q_RR) enabling lower distortion class D audio amplifiers as well as more efficient synchronous rectifiers and motor drives.

According to Alex Lidow, EPC’s co-founder and CEO, “This latest generation of eGaN FETs achieve higher performance in a smaller, more thermally efficient size, and at a comparable cost to traditional MOSFETs. The inevitable displacement of the aging power MOSFET with GaN devices is becoming clearer every day.”

Mods for mac os. EPC worked in collaboration with Semiconductor Power Electronics Center (SPEC) at University of Texas at Austin to develop a 400 V, 2.5 kW-capable eGaN FET-based four-level flying capacitor multilevel bridgeless totem-pole rectifier that is suitable for data center applications using the new EPC2215 200 V device. Professor Alex Huang from the University of Texas at Austin commented that, “the advantageous characteristics of eGaN FETs allowed this converter to achieve high power density, ultra-high efficiency, and low harmonic distortion.”

Price and Availability

Egan Fet

Pricing for products and related development and reference design boards are noted in the table below. All products and boards are available from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

About EPC

EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (Lidar), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

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Epc2214

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.