Infineon's OptiMOS™ N-channel power MOSFETs were developed to increase efficiency, power density and cost-effectiveness. Designed for high-performance applications and optimized for high switching frequencies, OptiMOS™ products offer the industry's best figure of merit. Nikon shutter count for mac.
Now complemented by StrongIRFET™ and StrongIRFET™ 2 N-channel MOSFETs, this extended portfolio creates a truly compelling combination. StrongIRFET™ and StrongIRFET™ 2 MOSFETs add robust design and excellent price/performance to the best-in-class technology of OptiMOS™ MOSFETs. Both product families meet the highest quality and performance demands.
LAFOX, Ill., April 08, 2021 (GLOBE NEWSWIRE) -- Richardson Electronics, Ltd. (NASDAQ: RELL) announces the FET-Jet calculator by UnitedSiC, an excellent tool to find the most optimized SiC device in the early stages of power design.
UnitedSiC recently released the FET-Jet calculator, a tool that helps engineers in the early design stage find their ideal SiC device. With no registration required, the calculator starts with three application functions, AC-DC, DC-DC (non-isolated), and DC-DC (isolated). From there, engineers may select the topology and specifications that will then provide instant results to facilitate fundamental design decisions including:
A few of the SiC MOSFET products exhibit variation in V p during V ds transition, at the time of turn-on and turn-off, which invalidates the assumption of constant V p for arriving at (1) and (2). Product datasheets do not provide details of variation in V gs with change in V ds, and a linear behaviour is assumed for this analysis. Wolfspeed is the premier provider of the most field-tested SiC, GaN Power, and RF solutions in the world. We are the world leader in silicon carbide and our field-tested RF components dominate the field. Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. SiC MOSFETs are designed and essentially processed the same way as silicon MOSFETs. The enhanced performance is derived from the material advantages inherent in the silicon carbide physics.
While SiC can be thought of in the same way as Si in many instances, there are fundamental differences in their operation. Specifically, the I-V curve for a SiC FET trends differently than that of a-Si FET, which leaves room for improper operation and potential safety hazards if not biased correctly. Silicon Carbide CoolSiC™ MOSFET represents the best performance, reliability and ease of use for system designers. Silicon Carbide (SiC) opens up new degrees of flexibility for designers to harness never before seen levels of efficiency and reliability.
- Overall efficiency
- Component losses by dynamic conduction contributions
- Junction temperature
- Current stress levels
- Number of devices in parallel (if any)
“During these unprecedented times, having innovative tools such as this calculator will help our customers identify their optimum design solutions,” said Greg Peloquin, Executive Vice President of Richardson Electronics’ Power & Microwave Technologies group. “UnitedSiC continues to provide excellent services and products to the power conversion market.”
Richardson Electronics provides solutions and adds value through design-in support, systems integration, prototype design and manufacturing, testing, logistics, and aftermarket technical service and repair on a global basis.
“Our FET-Jet calculator is one of many steps we have taken in the past year to enhance our customers’ experience with SiC devices,” said Chris Dries, President & CEO of UnitedSiC. “Continue to keep an eye out as we strive to provide you all with more content and resources for your SiC device needs.”
About Richardson Electronics, Ltd.
Richardson Electronics, Ltd. is a leading global provider of engineered solutions, power grid and microwave tubes and related consumables; power conversion and RF and microwave components; flat panel detector solutions and replacement parts for diagnostic imaging equipment; and customized display solutions. We serve customers in the alternative energy, healthcare, aviation, broadcast, communications, industrial, marine, medical, military, scientific, and semiconductor markets. The Company’s strategy is to provide specialized technical expertise and “engineered solutions” based on our core engineering and manufacturing capabilities. The Company provides solutions and adds value through design-in support, systems integration, prototype design and manufacturing, testing, logistics, and aftermarket technical service and repair through its global infrastructure. More information is available at www.rell.com.
Download any mac app for free. Richardson Electronics common stock trades on the NASDAQ Global Select Market under the ticker symbol RELL.
Sic Fets
Pro tools for mac os sierra. About Richardson Electronics – Power & Microwave Technologies
Silicon Carbide Transistor
For 70 years, Richardson Electronics has been your industry-leading global provider of engineered solutions, RF & microwave, and power products. With the launch of the Power & Microwave Technologies group, we continue this legacy and complement it with new products from the world’s most innovative technology partners. Richardson Electronics’ Power & Microwave Technologies group focuses on what we do best: identify and design disruptive technologies, introduce new products on a global basis, develop solutions for our customers, and provide exceptional worldwide support. As a global company, we provide solutions and add value through design-in support, systems integration, prototype design and manufacturing, testing, logistics, and aftermarket technical service and repair—all through our existing global infrastructure. More information is available at www.rellpower.com.
Silicon Carbide Mosfets
For Details Contact:
Chris Marshall
CTO/VP of Marketing
Phone: (630) 208-2222
chrism@rell.com
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